IGBTs & FETs. Bipolar Junction Transistors (BJT) > General Purpose and Low VCE(sat) Transistors > 2N5551. 2N5551: Small Signal NPN Bipolar Transistor. Cheap Amplifier, Buy Directly from China Suppliers: MUR460 FET high voltage. Amplifier board power supply board IRF9610/610 VMOSFET 2N5551/5401.
Features, Applications FEATURES Low current (max. 300 mA) High voltage (max. APPLICATIONS Switching and amplification in high voltage applications such as telephony.
DESCRIPTION NPN high-voltage transistor TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N5550 2N5551 VCEO collector-emitter voltage 2N5550 2N5551 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C open collector open base mW °C PARAMETER collector-base voltage CONDITIONS open emitter V MIN. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CHARACTERISTICS Tamb 25 °C unless otherwise specified.
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