2N5551 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N5551 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.31 W Maximum Collector-Base Voltage Vcb : 180 V Maximum Collector-Emitter Voltage Vce : 160 V Maximum Emitter-Base Voltage Veb : 6 V Maximum Collector Current Ic max : 0.6 A Max. Operating Junction Temperature (Tj): 135 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 6 pF Forward Current Transfer Ratio (hFE), MIN: 80 Noise Figure, dB: - Package: TO92.
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Cross-Reference Search 2N5551 Datasheet (PDF) 1.1. Size:10K _upd 2N5551DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 160V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0. Size:189K _upd UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x- 1.3. Size:249K _upd 2N5551CN Semiconductor Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage: VCBO = 180V, VCEO = 160V • Low collector saturation voltage: VCE(sat)=0.5V(MAX.) Ordering Information Type NO.
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Marking Package Code 2N5551CN 2N5551C TO-92N Outline Dimensions unit: mm 4.20 1.4. Size:249K _upd 2N5551N Semiconductor Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage: VCBO = 180V, VCEO = 160V • Low collector saturation voltage: VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401N Ordering Information Type NO.
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. The type was registered. Menggunakan Transistor Kelebihan: 1. Selain Tr B772 & D882 masih banyak. Persamaan transistor n5551; fungsi dioda m7; About. 166.85 Kb transistor.
Marking Package Code 2N5551N 2N5551 TO-9 1.5. Size:428K _upd 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 BVCEO 160 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 5 V - 10 mA > 80 TO-18 LCC-3 3 • Hermetic packages 4 • ESCC and JANS qualified 1 • Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5551HR is a silicon planar NPN transistor spe 1.6. Size:550K _upd Typical Characterisitics 2N5551K hFE —— IC Static Characteristic 50 1000 COMMON EMITTER 300uA Ta=25℃ 270uA 40 Ta=100℃ 240uA 210uA 30 180uA 100 Ta=25℃ 150uA 20 120uA 90uA 10 60uA COMMON EMITTER IB=30uA VCE=5V 0 10 02468 110 100 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCEsat —— IC VBEsat —— IC 1000 2 1 Ta=25℃ Ta=10 1.7. Size:31K _upd 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 ± 0.10 (0.02 ± 0.004) 0.31 FEATURES rad.
(0.012) • SILICON PLANAR EPITAXIAL NPN 3 TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 • CECC SCREENING OPTIONS 1.9 1.8. Size:339K _upd SEMICONDUCTOR 2N5551SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L FEATURES High Collector Breakdwon Voltage DIM MILLIMETERS _ + A 2.90 0.1 2 3: VCBO=180V, VCEO=160V B 1.30+0.20/-0.15 C 1.30 MAX Low Leakage Current. 1 D 0.40+0.15/-0.05: ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20 G 1.90 Low Saturatio 1.9. Size:188K _motorola MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 140 160 Vdc CollectorBase Voltage VCBO 160 180 Vdc EmitterBase Voltage VEB 1.10.