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Hack nokia n95. All Transistors. Cross Reference Search BJT TOP50: MOSFET TOP30: IGBT TOP15: Choosing Bipolar Transistor Replacements Material = Struct = Pc > W Vcb > V Vce > V Veb > V Ic > A Tj > C Ft > MHz Cc Caps = R1 = kOhm R2 = kOhm R1/R2 = Empty or zero fields are ignored during the search! TOTAL: 112109 transistors.
A733 Datasheet, Equivalent, Cross Reference Search Type Designator: A733 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.2 W Maximum Collector-Base Voltage Vcb : 60 V Maximum Collector-Emitter Voltage Vce : 50 V Maximum Emitter-Base Voltage Veb : 5 V Maximum Collector Current Ic max : 0.15 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 50 MHz Collector Capacitance (Cc): 4.5 pF Forward Current Transfer Ratio (hFE), MIN: 120 Noise Figure, dB: - Package: SOT23. Cross-Reference Search A733 Datasheet (PDF) 1.1. Size:706K _update SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN: 1 2 3 Collector Current Ic -150 1.2. Size:258K _update 2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier. 特点:h 高、特性好/Features: High h and excellent h linearity. FE FE FE 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA 1.3.
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Size:47K _philips DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA733 PNP general purpose transistor 1999 May 28 Product specification Supersedes data of 1998 Jul 21 Philips Semiconductors Product specification PNP general purpose transistor 2PA733 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max.
1 base 2 collector APPLICATIONS 3 emitter Gener 1.4. Size:41K _fairchild_semi KSA733 Low Frequency Amplifier Collector-Base Voltage: VCBO= -60V Complement to KSC945 Suffix -C means Center Collector (1. Base) TO-92 1 1. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage 1.5.
Size:123K _fairchild_semi September 2009 2SA733 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Collector 3.Base Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V 1.6. Size:69K _nec 1.7. Size:125K _samsung Low Frequency AmpIifier Collector-Base Voltage: VCBO= -60V Complement to KSC945 TO-92 1. Collector PNP EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25°C unless otherwise noted SymboI Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA 1.8.